N-Channel Enhancement Mode Power MOSFET
PE8205A
N-Channel Enhancement Mode Power MOSFET
Description
The PE8205A uses advanced trench technology to provide exc...
Description
PE8205A
N-Channel Enhancement Mode Power MOSFET
Description
The PE8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
● VDS = 20V, ID = 6A RDS(ON) < 34mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
D1 G1
G2
D2
S1 S2
Schematic diagram
Marking and pin Assignment
Application
●Battery protection ●Load switch ●Power management
TSSOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
8205A
PE8205A
TSSOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (No...
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