N-Channel Trench Power MOSFET
General Description
The PE8590 is N-channel MOS Field Effect Transistor designed for high ...
N-Channel Trench Power MOSFET
General Description
The PE8590 is N-channel MOS Field Effect
Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
Features
● VDS=85V; ID=92A@ VGS=10V; RDS(ON)<7.45mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● 64V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
PE8590
Schematic Diagram To-220 Top View
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
Drain Current (DC) at Tc=25℃
ID (DC) IDM (pluse)
Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD Maximum Power Dissipation(Tc=25℃)
Derating Facto...
