PE8804

PE8804 N-Channel Enhancement Mode Power MOSFET Description The PE8804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =8A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 19mΩ @ VGS=2.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment Application ● Uni-directional load switch ● Bi-directional load switch TSSOP-8 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±12 8 30 2 -55 To 150 Unit V V A A W ℃ Therma...