PE6005

N-Channel Enhancement Mode Power MOSFET Description The PE6005 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PE6005 D G S Schematic diagram SOT-223-3L view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 60 ±20 5 3.5 20 2 -55 To 150 Unit V V A A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient(Note 2) RθJA 62.5 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) ...