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PE6968 Dataheets PDF



Part Number PE6968
Manufacturers semi one
Logo semi one
Description N-Channel Enhancement Mode Power MOSFET
Datasheet PE6968 DatasheetPE6968 Datasheet (PDF)

6 N-Channel Enhancement Mode Power MOSFET Description The PE6 68 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package App.

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6 N-Channel Enhancement Mode Power MOSFET Description The PE6 68 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM application ● Load switch PE6968 Schematic diagram Marking and pin assignment TSSOP-8 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 20.


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