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PE2312 Dataheets PDF



Part Number PE2312
Manufacturers semi one
Logo semi one
Description Dual P & N-Channel Enhancement Mode Power MOSFET
Datasheet PE2312 DatasheetPE2312 Datasheet (PDF)

PE2312 Dual Enhancement Mode Power MOSFET (N- and P- Channel) DESCRIPTION The PE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. (6)D1 (1)G1 (3)G2 (4)D2 GENERAL FEATURES ● P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V ● N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ V.

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PE2312 Dual Enhancement Mode Power MOSFET (N- and P- Channel) DESCRIPTION The PE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. (6)D1 (1)G1 (3)G2 (4)D2 GENERAL FEATURES ● P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V ● N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V Application ●PWM applications ●Load switch ●Power management (5)S1 (2)S2 N-Channel MOSFET P-Channel MOSFET Schematic diagram SOT-23-6L top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 -20 Gate-Source Voltage VGS ±10 ±12 Drain Current-Continuous ID 3 -3 Drain Current -Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,T.


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