PE2N7002

N-Channel Enhancement Mode Power MOSFET PE2N7002 General Features ● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ● Lead free product is acquired ● Surface mount package Application ●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids,lamps, hammers,display, memories, transistors, etc. ●Battery operated systems ●Solid-state relays Schematic diagram Marking and pin assignment SOT-23 top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 60 ±20 0.115 0.8 0.2 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 625 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain...