N-Channel Enhancement Mode Power MOSFET
PE3010
N-Channel Enhancement Mode Power MOSFET
Description
The PE3010 uses advanced trench technology and design to pro...
Description
PE3010
N-Channel Enhancement Mode Power MOSFET
Description
The PE3010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.5V
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current
Application
● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
Marking and pin assignment
SOP-8 top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
L...
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