Document
N-Channel Enhancement Mode Power MOSFET
PE3018U
General Features
● VDS = 30V,ID = 0.2A RDS(ON) < 4Ω @ VGS=4.5V RDS(ON) < 8Ω @ VGS=2.5V ESD Rating:HBM 2300V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lLamps, hammers,display,
memories, transistors, etc. ●Battery operated systems ●Solid-state relays
Schematic diagram Marking and pin assignment
SOT-323 top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
30 ±20 0.2 0.58 0.35 -55 To 150
350
Unit
V V A A W ℃
℃/W
Electrical Characteristics (TA=25℃unle.