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PE3018U Dataheets PDF



Part Number PE3018U
Manufacturers semi one
Logo semi one
Description N-Channel Enhancement Mode Power MOSFET
Datasheet PE3018U DatasheetPE3018U Datasheet (PDF)

N-Channel Enhancement Mode Power MOSFET PE3018U General Features ● VDS = 30V,ID = 0.2A RDS(ON) < 4Ω @ VGS=4.5V RDS(ON) < 8Ω @ VGS=2.5V ESD Rating:HBM 2300V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lLamps, hammers,display, memories, transistors, etc. ●Battery operated systems ●Solid-state relays Schematic diagram Marking and pin assignment SOT-323 top view.

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N-Channel Enhancement Mode Power MOSFET PE3018U General Features ● VDS = 30V,ID = 0.2A RDS(ON) < 4Ω @ VGS=4.5V RDS(ON) < 8Ω @ VGS=2.5V ESD Rating:HBM 2300V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lLamps, hammers,display, memories, transistors, etc. ●Battery operated systems ●Solid-state relays Schematic diagram Marking and pin assignment SOT-323 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 30 ±20 0.2 0.58 0.35 -55 To 150 350 Unit V V A A W ℃ ℃/W Electrical Characteristics (TA=25℃unle.


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