N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
Description
The PE30H15 uses advanced trench technology and design to provide ex...
Description
N-Channel Enhancement Mode Power MOSFET
Description
The PE30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =150A RDS(ON) <3.0 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
PE30H15
Schematic diagram TO-220-3L top view
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation
IDM PD
Derati...
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