PE20N6
N-Channel Enhancement Mode Power MOSFET
Description
The PE20N6 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche volta...
