PE2300

PE2300 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT-23 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±10 4.5 13.5 1.25 -55 To 150 Unit V V A A W ℃ Thermal Characterist...