PE0213

N-Channel Enhancement Mode Power MOSFET Description The PE0213 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 200V,ID =13A RDS(ON) <140mΩ @ VGS=10V (Typ:123mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Boost converters ● LED backlighting ● Uninterruptible power supply PE0213 Schematic diagram TO-220-3L top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous ID (100℃) Drain Current-Continuous(TC=100℃) IDM Pulsed Drain Current PD Maximum Power Dissipation Derating factor EAS Single pulse avalanche energy (Note 5) TJ,TSTG Operating Junction and Storage Temperature ...