T4M10T600B

LITE-ON SEMICONDUCTOR T4M10T-B SERIES Sensitive Gate Triacs Sillicon Bidirectional Thyristors TRIACS 4 AMPERES RMS 600 VOLTS FEATURES Sensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits High Immunity to dv/dt - 50 V/us Minimum at 125℃ Commutating di/dt - 3.0 A/ms Minimum at 125℃ Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design On-State Current Rating of 4 Amperes RMS at 100℃ High Surge Current Capability - 40 Amperes Blocking Voltage to 800 Volts Rugged, Economical TO220AB Package Operational in Three Quadrants: Q1, Q2, and Q3 Pb-Free Package MECHANICAL DATA Case: Molded plastic Weight: 0.07 ounces, 2.0 grams TO-220AB B C L D TO-220AB M DIM. MIN. MAX. A 14.22 15.88 B 9.65 10.67 K PIN 123 O E F IJ A C 2.54 3.43 D 5.84 6.86 E 8.26 9.28 F - 6.35 G 12.70 14.73 H 2.29 2.79 G I 0.51 1.14 J 0.40 0.67 K 3.53 4.09 N L 3.56 4.83 HH M 1.14 1.40 N 2.03 2.92 O 1.17 1.37 All Dimensions in millimeter PIN ASSIGNMENT 1 Main Te...