12N60C

HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GES VGEM I C25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 300 µH PC TC = 25°C TJ T JM Tstg Md Mounting torque with screw M3 Mounting torque with screw M3.5 Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 V 600 V ±20 V ±30 V 24 A 12 A 48 A ICM = 24 @ 0.8 VCES 100 A W -55 ... +150 150 -55 ... +150 °C °C °C 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 6g 300 ° C TO-247 G C E C (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Features Very high frequency IGBT New generation HDMOSTM process Internationalstandardpackage JEDEC TO-247 High peak current handling capability Symbol BVCES VGE(th...