LN2305

P-Channel Enhancement Mode Field Effect Transistor LN2305 ■ General Description VDSS -20V Product Summary ID -0.45A -0.35A RDS(ON)(mΩ)TYP 135 @ VGS=-4.5V 180 @ VGS=-2.5V ■ Features  Super high dense cell design for low RDS(ON)  Rugged and reliable  Simple drive requirement  SOT-23-3L/B package ■ Package  SOT-23-3L/B 3 D S ■ Ordering Information GS 12 SOT-23-3L/B (Top View) G D Part Number LN2305 Storage Temperature -55°C to +150°C Package SOT-23-3L/B Devices Per Reel 3000 ■ Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Coutinuous drain current (Tj=150℃) TA=25℃ TA=80℃ Pulsed drain current Drain-source Diode forward current Power dissipation TA=25℃ TA=70℃ Operating junction Temperature range (TA=25℃ unless otherwise noted) symbol limit unit VDSS VGSS ID -20 V ±12 V -0.8 A -0.7 A IDM -1.8 A Is -0.58 A 0.27 PD W 0.16 Tj -55—150 ℃ Rev.1.0 —July. 8, 2011 1 www.natlinear.com ...