LN2306

N-Channel Enhancement Mode Field Effect Transistor ■ General Description VDSS 20V Product Summary ID 0.65A 0.55A RDS(ON)(mΩ)TYP 130 @ VGS= 4.5V 160 @ VGS= 2.5V LN2306 ■ Features  Super high dense cell design for low RDS(ON)  Rugged and reliable  Simple drive requirement  SOT-23-3B package ■ Package  SOT-23-3B 3 D D ■ Ordering Information GS 12 SOT-23-3B (Top View) G S Part Number LN2306 Storage Temperature -55°C to +150°C Package SOT-23-3B Devices Per Reel 3000 ■ Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Coutinuous drain current TA=25℃ (Tj=150℃) TA=80℃ Pulsed drain current Drain-source Diode forward current Power dissipation TA=25℃ TA=70℃ Operating junction Temperature range (TA=25℃ unless otherwise noted) symbol limit unit VDSS VGSS ID 20 V ±8 V 1.30 A 0.90 A IDM 2.0 A Is 0.6 A 0.27 PD W 0.16 Tj -55—150 ℃ Rev.1.0 —July. 7, 2011 1 www.natlinear.com ■ Electrical C...