P-Channel Enhancement Mode Field Effect Transistor
LN2307B
■ General Description
VDSS -20V
Product Summary ID
-0.45A ...
P-Channel Enhancement Mode Field Effect
Transistor
LN2307B
■ General Description
VDSS -20V
Product Summary ID
-0.45A -0.35A
RDS(ON)(mΩ)TYP 300 @ VGS=-4.5V 450 @ VGS=-2.5V
■ Features
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement 2.5V drive SOT-523 package
■ Package
SOT-523
3
D
S
■ Ordering Information
GS
12
SOT-523 (Top View)
G D
Part Number LN2307B
Storage Temperature -55°C to +150°C
Package SOT-523
Devices Per Reel 3000
■ Absolute Maximum Ratings
parameter
Drain-source voltage
Gate-source voltage
Coutinuous drain current (Tj=150℃)
TA=25℃ TA=80℃
Pulsed drain current
Drain-source Diode forward current
Power dissipation
TA=25℃ TA=70℃
Operating junction Temperature range
(TA=25℃ unless otherwise noted)
symbol
limit
unit
VDSS VGSS
ID
-20 V ±12 V -1.1 A -0.9 A
IDM -2.4 A
Is
-0.26
A
0.27 PD W
0.16
Tj
-55—150
℃
Rev.1.0 —July. 11, 2011
1
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