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LN2308B

N-Channel Enhancement Mode Field Effect Transistor

Description

N-Channel Enhancement Mode Field Effect Transistor LN2308B ■ General Description VDSS 20V Product Summary ID 0.65A 0.55A RDS(ON)(mΩ)TYP 260 @ VGS= 4.5V 320 @ VGS= 2.5V ■ Features  Super high dense cell design for low RDS(ON)  Rugged and reliable  Simple drive requirement  SOT-523 package ■ Package  SOT-523 3 D D ■ Ordering Information GS 12 SOT...

natlinear

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