Document
N-Channel Enhancement Mode Field Effect Transistor
LN2308
■ General Description
VDSS 20V
Product Summary ID
0.65A 0.55A
RDS(ON)(mΩ)TYP 260 @ VGS= 4.5V 320 @ VGS= 2.5V
■ Features
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23-3L/B package
■ Package
SOT-23-3B/ SOT-23-3L
3
D
D
■ Ordering Information
GS
12
SOT-23-3B/SOT-23-3L (Top View)
G S
Part Number LN2308
Storage Temperature -55°C to +150°C
■ Absolute Maximum Ratings
parameter
Drain-source voltage
Gate-source voltage
Coutinuous drain current
TA=25℃
(Tj=150℃)
TA=80℃
Pulsed drain current
Drain-source Diode forward current
Power dissipation
TA=25℃ TA=70℃
Operating junction Temperature range
Package SOT-23-3L/B
Devices Per Reel 3000
(TA=25℃ unless otherwise noted)
symbol
limit
unit
VDSS VGSS
ID
20 V ±12 V 0.65 A 0.45 A
IDM 1.0 A Is 0.3 A
0.27 PD W
0.16
Tj
-55—150
℃
Rev.1.0 —July. 7, 2011
1
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