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LN2308 Dataheets PDF



Part Number LN2308
Manufacturers natlinear
Logo natlinear
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet LN2308 DatasheetLN2308 Datasheet (PDF)

N-Channel Enhancement Mode Field Effect Transistor LN2308 ■ General Description VDSS 20V Product Summary ID 0.65A 0.55A RDS(ON)(mΩ)TYP 260 @ VGS= 4.5V 320 @ VGS= 2.5V ■ Features  Super high dense cell design for low RDS(ON)  Rugged and reliable  Simple drive requirement  SOT-23-3L/B package ■ Package  SOT-23-3B/ SOT-23-3L 3 D D ■ Ordering Information GS 12 SOT-23-3B/SOT-23-3L (Top View) G S Part Number LN2308 Storage Temperature -55°C to +150°C ■ Absolute Maximum Ratings param.

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N-Channel Enhancement Mode Field Effect Transistor LN2308 ■ General Description VDSS 20V Product Summary ID 0.65A 0.55A RDS(ON)(mΩ)TYP 260 @ VGS= 4.5V 320 @ VGS= 2.5V ■ Features  Super high dense cell design for low RDS(ON)  Rugged and reliable  Simple drive requirement  SOT-23-3L/B package ■ Package  SOT-23-3B/ SOT-23-3L 3 D D ■ Ordering Information GS 12 SOT-23-3B/SOT-23-3L (Top View) G S Part Number LN2308 Storage Temperature -55°C to +150°C ■ Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Coutinuous drain current TA=25℃ (Tj=150℃) TA=80℃ Pulsed drain current Drain-source Diode forward current Power dissipation TA=25℃ TA=70℃ Operating junction Temperature range Package SOT-23-3L/B Devices Per Reel 3000 (TA=25℃ unless otherwise noted) symbol limit unit VDSS VGSS ID 20 V ±12 V 0.65 A 0.45 A IDM 1.0 A Is 0.3 A 0.27 PD W 0.16 Tj -55—150 ℃ Rev.1.0 —July. 7, 2011 1 www.natli.


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