LN2310

N-Channel Enhancement Mode Field Effect Transistor ■ General Description VDSS 30V Product Summary ID 5.8A 5A RDS(ON)(mΩ)TYP 28 @ VGS=10V 31 @ VGS=4.5V ■ Features  Super high dense cell design for low RDS(ON)  Rugged and reliable  Simple drive requirement  SOT-23-3L package ■ Package  SOT-23-3L LN2310 ■ Ordering Information Part Number LN2310 Storage Temperature -55°C to +150°C ■ Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃ -pulse db Maximum power dissipation Operating junction Temperature range Package SOT-23-3L Devices Per Reel 3000 (TA=25℃ unless otherwise noted) symbol limit unit VDS 30 V VGS ±20 V ID 5.8 A IDM 30 A PD 1.25 W Tj -55—150 ℃ Rev.1.0 —June. 5, 2012 1 www.natlinear.com ■ Electrical Characteristics LN2310 (TA=25℃ unless otherwise noted) Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate thr...