LN2311

P-Channel Enhancement Mode Field Effect Transistor ■ General Description VDSS -30V Product Summary ID -4.4A RDS(ON)(mΩ)TYP 52 @ VGS=-10V 65 @ VGS=-4.5V ■ Features  Super high dense cell design for low RDS(ON)  Rugged and reliable  Simple drive requirement  SOT-23-3L/B package ■ Package  SOT-23-3L/B  SOT-89-3L 3 D GS 12 SOT-23-3L/B (Top View) S G D LN2311 ■ Ordering Information G DS 123 SOT-89-3L (TOP VIEW) Part Number LN2311 Storage Temperature -55°C to +150°C -55°C to +150°C Package SOT-23-3L/B SOT-89-3L Devices Per Reel 3000 3000 Rev.1.0 —June. 5, 2012 1 www.natlinear.com ■ Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃ -pulse db Maximum power dissipation Operating junction Temperature range LN2311 (TA=25℃ unless otherwise noted) symbol limit unit VDS -30 V VGS ±20 V ID -4.4 A IDM -30 A PD 1.25 W Tj -55—150 ℃ ■ Electrical Characteristics (TA=25...