Si3433

New Product P-Channel 1.8-V (G-S) MOSFET Si3433 Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.042 @ VGS = - 4.5 V - 20 0.057 @ VGS = - 2.5 V 0.080 @ VGS = - 1.8 V 3 mm TSOP-6 Top View 16 25 34 2.85 mm ID (A) - 5.6 - 4.8 - 4.1 (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage Gate-Source Voltage VDS VGS - 20 "8 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C ID IDM IS PD TJ, Tstg - 5.6 - 4.3 - 4.1 - 3.1 - 20 - 1.7 - 0.9 2.0 1.1 1.0 0.6 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71160 S-00624—Rev. A, 03-Apr-00 t v 5 sec Stead...