ICrSiliconix
~ incorporated
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(fl) (A)
PACKAGE
VN2406L
240
6
...
ICrSiliconix
~ incorporated
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(fl) (A)
PACKAGE
VN2406L
240
6
0.22
TO-92
VN2406M 240
6 0.25 TO-237
Performance Curves: VNDB24 (See Section 7)
VN2406L, VN2406M
N-Channel Enhancement-Mode MOS
Transistors
TO-92
BOTTOM VIEW
1 SOURCE 2 GATE 3 DRAIN
TO-237
BOTTOM VIEW
1 SOURCE 2 GATE
3 DRAIN
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Vos
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current 1
TA= 25DC TA = 100DC
Power Dissipation
TA= 25DC TA = 100DC
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
VGS 10 10M Po Tj. Tstg
h
VN2406L
VN2406M
240 240
±30 0.17
±30 0.19
0.11 0.12
1.7 0.8 0.32
2 1 0.4
-55 to 150
300
UNITS V
A
W DC
THERMAL RESISTANCE
THERMAL RESISTANCE Junction-to-Ambient
SYMBOL RthJA
VN2406L 156
VN2406M 125
UNITS DC/W
iii
1Pulse width limited by maximum jun...