VN45350

.r'Siliconix .L;II incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) PACKAGE VN45350L 450 350 0.030 TO-92 VN45350T 450 350 0.020 SOT-23 Performance Curves: VND050 (See Section 7) PRODUCT MARKING IVN45350T V04 VN45350 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 BOTTOM VIEW ~~ ~ ~ 1 SOURCE 2 GATE 3 DRAIN SOT-23 TOP VIEW 1 DRAIN 2 SOURCE 3 GATE 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Vos Gate-Source Voltage Vas Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) 10 10M Po TJ. Tstg TL VN45350L VN45350T 450 450 ±30 0.030 0.019 ±30 0.020 0.013 0.12 0.80 0.32 0.08 0.35 0.14 -55 to 150 300 UNITS V A W °C II THERMAL RESISTANCE THERMAL RESISTANCE Junction-to-Ambient SYMBOL RthJA ...