VP2410L

VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) rDS(on) Max (W) –240 10 @ VGS = –4.5 V VGS(th) (V) –0.8 to –2.5 ID (A) –0.18 Features D High-Side Switching D Secondary Breakdown Free: –255 V D Low On-Resistance: 8 W D Low-Power/Voltage Driven D Excellent Thermal Stability Benefits D Ease in Driving Switches D Full-Voltage Operation D Low Offset Voltage D Easily Driven Without Buffer D No High-Temperature “Run-Away” Applications D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Power Supply, Converters D Motor Control D Switches TO-226AA (TO-92) S1 G2 D3 Top View Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range TA= 25_C TA= 100_C TA= 25_C TA= 100_C ...