VQ1006 SERIES
N-Channel Enhancement-Mode MOS Transistor Arrays
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
...
VQ1006 SERIES
N-Channel Enhancement-Mode MOS
Transistor Arrays
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(11) (A)
PACKAGE
VQ1006J
90
4.5 0.40 Plastic
VQ1006P
90
4.5 0.40 Side Braze
Performance Curves: VNDQ09 (See Section 7)
14-PIN DIP SIDE BRAZE
~"." . .) ..... :. "" "
14-PIN PLASTIC
~Siliconix ~ incorporated
TOP VIEW
Oual-In-Line Package
=ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current. Pulsed Drain Current 1
TA= 25DC TA= 100DC
Power Dissipation - Single
TA= 25DC TA= 100DC
Power Dissipation - Quad
TA= 25DC TA=100DC
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
VGS ID IDM
PD
TJ. Tstg
h
VQ1006J
VQ1006P
90 ±30 0.40 0.23
90 ±20 0.40 0.23
±2 ±2 1.3 1.3
0.52
0.52
22
O.B O.B
-55 to 150
300
UNITS V A
W DC
THERMAL RESISTANCE
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient - Sing...