VQ1006

VQ1006 SERIES N-Channel Enhancement-Mode MOS Transistor Arrays PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (11) (A) PACKAGE VQ1006J 90 4.5 0.40 Plastic VQ1006P 90 4.5 0.40 Side Braze Performance Curves: VNDQ09 (See Section 7) 14-PIN DIP SIDE BRAZE ~"." . .) ..... :. "" " 14-PIN PLASTIC ~Siliconix ~ incorporated TOP VIEW Oual-In-Line Package =ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current. Pulsed Drain Current 1 TA= 25DC TA= 100DC Power Dissipation - Single TA= 25DC TA= 100DC Power Dissipation - Quad TA= 25DC TA=100DC Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) VGS ID IDM PD TJ. Tstg h VQ1006J VQ1006P 90 ±30 0.40 0.23 90 ±20 0.40 0.23 ±2 ±2 1.3 1.3 0.52 0.52 22 O.B O.B -55 to 150 300 UNITS V A W DC THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL Junction-to-Ambient - Sing...