VQ2006

VQ2006 SERIES P·Channel Enhancement·Mode MOS Transistor Arrays PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) PACKAGE VQ2006J -90 VQ2006P -90 5 -0.41 Plastic , 5 -0.41 Side Braze Performance Curves: VPDV10 (See Section 7) 14·PIN DIP SIDE BRAZE ~..:.:.... " ~ .... :'. ~17' 14·PIN PLASTIC ~~VD ~.r'Siinlciocrpoonratiexd TOP VIEW Oual-In-Llne Package ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VQ2006J VQ2006P Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA= 100°C Power Dissipation - Single TA= 25°C TA= 100°C Power Dissipation - Quad TA= 25°C TA= 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Vos VGS 10 10M Po TJ. T s1g lL -90 ±30 -0.41 -0.23 -90 ±20 -0.41 -0.23 ±3 ±3 1.3 1.3 0.52 0.52 22 0.8 0.8 -55 to 150 300 UNITS V A W °C THERMAL RESISTANCE ' THERMAL RESISTANCE Junct...