VDDQ20

~Siliconix ~ im::orporated VDDQ20 N-Channel Depletion-Mode MOSFET DESIGNED FOR: o Switching Amplification FEATURES High Breakdown Voltage> 200 V Low rOS(on) < 3 n TYPE Single PACKAGE DEVICE TO-206AC ND2012E, ND2020E TO-92 ND2012L, ND2020L Chip Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.010 (0.254) 0.0087 (0.2209) Source Pad 0.0070 (0.1778) 0.010 (0.254) T0.038 1 (0.965) 7-95 VDDQ20 TYPICAL CHARACTERISTICS ~.-r-Sinicloircpoornatiexd On-Resistance & Drain Current vs. Gate-Source Cutoff Voltage 25 r---~-----r----~----r----,1000 ros @ 10 = 20 rnA, VGS = 0 V = =20 I----If\o loss @ Vos 7.5 V, VGS 0 V 800 On-Resistance vs. Drain Current ::I~~tfIIIIIIV II ~IIIII ros (.0. ) 15 600 10 (rnA) 10 ~---4----~~~~----~--~400 rOS (.0.) 15 10 ND2020 111 - YI ND2012 5 200 5 0 ~--~~--~~~----------~o 0 -1 -2 -3 -4 -5 VGS(OFF) (V) o 10 100 10(mA) 1K Body-Drain Leakage Current I: Vos - 10 V TJ 25°C losv (nA) 10 l ND2020 , , ,ND2012...