VDDV24

..rSiliconix ~ incorporated VDDV24 N-Channel Depletion-Mode MOSFET DESIGNED FOR: Switching Amplification FEATURES High Breakdown> 240 V LowrOS(on)<10n TYPE Single PACKAGE DEVICE TO-205AD ND2406B, ND2410B TO-92 ND2406L, ND2410L Chip Available as above specifications GEOMETRY DIAGRAM Gate Pad ....... 1~ (0.127) - 0.007 (0.178) ..i................................................. .............................................................i . . . . . . . . . . . . . . . . 11 0.058 (1.47) Source Pad 0.006 (0.152) . .....................'u............u 1~.~~~0~.05~3~~~.10.007 (0.178) "1111" (1.35) .. 7-99 VDDV24 TYPICAL CHARACTERISTICS ...