VNDO50

.rSiliconix .LJI incorporated VND050 N·Channel Enhancement·Mode MOSFET DESIGNED FOR: Switching o Spike Protection FEATURES High Breakdown 450 V Available in Surface Mount Package SOT-23 TYPE Single PACKAGE DEVICE TO-92 VN45350L VN50300L SOT-23 VN45350T VN50300T Chip Available as above specifications GEOMETRY DIAGRAM VND050 Source Pad 0.0034 (0.0863) 0.0043 (0.1092) I- 0.028 (0.711) T 0.026 (0.660) 0.0041 (0.1041) 0.0043 (0.1092) Gate Pad 7-113 VND050 TYPICAL CHARACTERISTICS 10 (rnA) Output Characteristics 100 VGS - 20 V "" , ~BO ~~ ,l60 40 V 10 V..!!... 9V BV 7V 6V 20 5V 4V o o 40 BO 120 160 200 Vos (V) ~.-r'Sinicloircpoornatiexd 10 (rnA) Ohmic Region Characteristics Y20 VGS= 10V II I 16 TJ = 25°C VA 1~ 6V 12 ~ .... ~ J..ooo'" 51V I~ 10' B~ 4.51V 4 ~ ~ I 41V o I~ o 3.5 V 2 3 45 Vos (V) Output Characteristics for Low Gate Drive / )5 VGIl = 7 V 5V........t-" III ILf/4 TJ = 25°C / V4.5V / 3 nrL 10 V/ (rnA...