VNDP06

VNDP06 N·Channel Enhancement·Mode MOSFET tcrSiliconix ~ incorporated DESIGNED FOR: = S'vVitching Amplification FEATURES Protection Diode Low rDS(on) < 10 n TYPE Single IPAC- KAGE DEV-IC-F- TO-206AC VN10KE TO-92 VN0610L, VN2222L TO-237 VN10KM, VN2222KM Chip Available as above specifications GEOMETRY DIAGRAM Gate Pad ~ (0.224) 0.0063 (0.16) Source Pad 0.0081 (0.206) 0.0059 (0.15) 7-118 T 0.038 (0.965) 1 . z .~SilicDnix incorporated TYPICAL CHARACTERISTICS 1.25 1.00 0.75 10 (A) 0.50 0.25 Output Characteristics 7V 6V 5V 4V 3V 2V 24 68 Vos (V) 10 VNDP06 Ohmic Region Characteristics 1.0 TJ = 25°C Vas = 10 V/ 6Y, / V5V 0.8 L /' ~ v.. '/ '"0.6 1'..... ~ 11 4V 10 (A) 0.4 /,~ /'~ ~V ,0.2 Vi.V A~ 11 13 ) - _12)- 0 0 2 3 45 Vos (V) Output Characteristics for Low Gate Drive 50 TJ - 25°C I 40 10 (rnA) 30 20 V Vas - 2.0 V / Sf!-v II 1.8 V Z J'/~ "1".6 ,10 Ij 1.5 V 1.4 V 1.2 V o o 0.4 0.8 1.2 1.6 Vos (V) 2.0 On-Resistance 5 4...