VNDQ03

~SilicDnix ~ incorporated VNDQ03 N·Channel Enhancement·Mode MOSFET DESIGNED FOR: Switching Amplification FEATURES Low rDS(on) < 3 .n TYPE Single Quad PACKAGE DEVICE TO-20SAD VN0300B TO-92 VN0300L TO-237 YN0300M 14-Pin Plastic YQ1001J 14-Pin Dual-In- Line II YQ1001P Chip Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.010 (0.254) 0.0087 (0.2209) Souroe Pad 0.007 (0.1778) .lLQ..1.Q.. (0.254) T0.038 1 (0.965) 7-123 VNDQ03 TYPICAL CHARACTERISTICS Output Characteristics 2.0 v s= 10 V 6V /1.S / 1.2 TJ = 2SoC SV 10 (A) O.B " 'F 0.4 4V 3V 2V 0 0 4 8 12 16 20 Vos (V) ~SilicDnix ~ incorporated . Ohmic Region Characteristics ,I2.0 TJ = 2SoC /7V Va1l= 10 V I 1 V1.6 100-"" /'r' 1.2 10 (A) O.B VI / -,Vi LI-IIV/' '{flY 0.4 J'Ib I--"'" I/J o~ o 23 Vos (V) SIV 1 slV 1 4'V J 3V 2V 4S Output Characteristics for Low Gate Drive 200 vasV-II3.S I160 L -2.9V I I -10 I(rnA) 120 80 'I ~ IV f l 1.00""" rJI/'r' ...