N-Channel Enhancement-Mode MOSFET
VNDQ06
.:rSiliconix
~ incorporated
N·Channel Enhancement·Mode MOSFET
DESIGNED FOR:
• Switching • Amplification
FEATUR...
Description
VNDQ06
.:rSiliconix
~ incorporated
N·Channel Enhancement·Mode MOSFET
DESIGNED FOR:
Switching Amplification
FEATURES Low rOS(on) < 3.5 n
TYPE Single
Quad
PACKAGE
DEVICE
TO-205AD 2N6659, 2N6660 VN67AB
TO-220SD VN40AFD, VN46AFD, VN66AFD, VN67AFD
TO-220 VN66AD, VN67AD
14-Pin Plastic
VQ1004J
14-Pin Dual-In-
Line
VQ1004P
Chip
Available as above specifications
GEOMETRY DIAGRAM
Gate Pad 0.010 (0.251) 0.0087 (0.2209)
Source Pad 0.0070 (0.1778) 0.010 (0.254)
T 0.038 (0.965)
1
7-128
~SilicDnix ~ incorporated TYPICAL CHARACTERISTICS
Output Characteristics
2.0 Vas = 10 V
TJ=25°C 7V
1.6
f
'/1.2
10
rr(A) 0.8
0.4
6V 5V 4V
3V
0 0 10 20 30 40 50 Vos (V)
VNDQ06
Ohmic Region Characteristics
2.0 VVas = 10 V V'svJ
/;"
/ t/'1.6 TJ = 2~OC I J /
1.2
/~ / / / /~
10 (A) 0.8
liD / fA ~/. / '
A0.4
~V ~
o e;
o
23
7V
I
6V
I
5V
4'V
3 1V 2V 45
Vos (V)
Output Characteristics for Lcw Gate Drive
100 I Vas = 3 V I TJ -25°C
I80 I . / ' 2.8...
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