VNDQ06

VNDQ06 .:rSiliconix ~ incorporated N·Channel Enhancement·Mode MOSFET DESIGNED FOR: Switching Amplification FEATURES Low rOS(on) < 3.5 n TYPE Single Quad PACKAGE DEVICE TO-205AD 2N6659, 2N6660 VN67AB TO-220SD VN40AFD, VN46AFD, VN66AFD, VN67AFD TO-220 VN66AD, VN67AD 14-Pin Plastic VQ1004J 14-Pin Dual-In- Line VQ1004P Chip Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.010 (0.251) 0.0087 (0.2209) Source Pad 0.0070 (0.1778) 0.010 (0.254) T 0.038 (0.965) 1 7-128 ~SilicDnix ~ incorporated TYPICAL CHARACTERISTICS Output Characteristics 2.0 Vas = 10 V TJ=25°C 7V 1.6 f '/1.2 10 rr(A) 0.8 0.4 6V 5V 4V 3V 0 0 10 20 30 40 50 Vos (V) VNDQ06 Ohmic Region Characteristics 2.0 VVas = 10 V V'svJ /;" / t/'1.6 TJ = 2~OC I J / 1.2 /~ / / / /~ 10 (A) 0.8 liD / fA ~/. / ' A0.4 ~V ~ o e; o 23 7V I 6V I 5V 4'V 3 1V 2V 45 Vos (V) Output Characteristics for Lcw Gate Drive 100 I Vas = 3 V I TJ -25°C I80 I . / ' 2.8...