VNDQ09

~SilicDnix ~ incorporated VNDQ09 N·Channel Enhancement·Mode MOSFET DESIGNED FOR: GI Switching Amplification FEATURES .nII Low rDS(on) < 4 TYPE Single Quad PACKAGE DEVICE TO-20SAD VN90AB 2N6661 TO-92 VNOBOBL TO-237 VNOBOBM TO-220SD VNBBAFD TO-220 VNBBAD 14-Pin Plastic VQ1006J 14-Pin Dual-In- Line e VQ1004P GEOMETRY DIAGRAM Gate Pad 0.010 (0.254) MQl!L (0.2209) Source Pad 0.0070 (0.1778) ~ (0.254) T 0.038 (0.965) 1 III 7-133 VNDQ09 TYPICAL. CHARACTERISTICS Output Characteristics I1.25 V~s =10 ~ 1.00 { 0.75 10 (A) 0.50 0.25 rt SV 5V 4V 3V _ 2V a a 10 20 30 40 50 VOS (V) ~SiliCDnix ~ incorporated Ohmic Region Characteristics 1.0 TJ =25°C VGs= 10~ 4=- L""O.B / ~ J._ / ~ 5V VVO.S / ~~ 4V 10 (A) 0.4 ~ ~ ~ i""""'" j~ ", ~~ 0.2 i""'" 3V 2V o a 1.0 2.0 3.0 4.0 5.0 Vos (V) Output Characteristics for Low Gate Drive vI I100 VG =3 ~2.JV f'sy-80 III AI V III f-- TJ =25°C - 10 (rnA) so 40 "r/ I I II!. 2.4 V 'II V I I r/...