VNDQ12

VNDQ12 .rY"Siliconix ~ incorporated N·Channel Enhancement·Mode MOSFET DESIGNED FOR: Switching Amplification FEATURES Low rOSlon) < 4.5 n TYPE Single PACKAGE DEVICE TO-205AD VN1206B TO-220 VN1206D TO-237 VN1206M, VN1210M TO-S2 VN1206L, VN1210L Chip Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.010 (0.254) 0.0087 (0.2209) Source Pad 0.0070 (0.1778) .-JW..Q. (0.254) 7-138 T 0.038 (0.965) 1 ~SilicDnix ~ incorporated TYPICAL CHARACTERISTICS Output Characteristics 2.0 rr~ VGS - 10 V 1.6 V1.2 10 (A) O.B 7V 6V 5V 4V 0.4 3V 2V 0 0 20 40 60 BO Vos (V) 100 VNDQ12 Ohmic Region Characteristics 1000 VVGS= 10V./ BOO 600 10 (mA) 400 6V V / / / ./ ...... ....... / / [.? ./.'...: ' / ~ 4;:" 3V b200 ~ ,"V L 0 0 2 3 45 Vos (V) Output Characteristics for Low Gate Drive 200 VIV -VGS= 3.0 2.6V_ 160 2.8V~ i f .A'I h / L~ 120 10 ~/ /I.V./ " I I (mA) BO ~ Jjr V 2.2 V II ~ .... 2.0 V 40 j ~ 1.B V o I&-- 1.6...