VNDQ20

.:r-Siliconix ~ incorporated VNDQ20 N·Channel Enhancement·Mode MOSFET DESIGNED FOR: Switching Amplification FEATURES High Breakdown> 200 V Low rDSlon) < 10 n TYPE Single PACKAGE DEVICE TO-92 BS107 VN2010L, VN2020L Chip Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.010 (0.254) 0.0087 (0.2209) Source Pad 0.0070 (0.1778) -lL..1Q. (0.254) T 0.038 (0.965) 1 7-143 VNDQ20 TYPICAL CHARACTERISTICS Output Characteristics 1.0 ~I :--VGS ; 10 V O.B l [0.6 10 r'-(A) 0.4 Y 0.2 "o o 20 40 60 VOS (V) SV 4V 3.S V 3V 12 .S V 2V BO 100 ~Siliconix ~ incorporated Ohmic Region Characteristics O.S TJ ; 2SoC 0.4 ~VGS - 10 V ~/ "L:V 4V ~~ ~ rsv0.3 ~~ h~ I 10 (A) 0.2 , ~0.1 ~ ~~ ~ ..,...r- ~ 3V 2V o o 2 3 4S Vos (V) Output Characteristics for Low Gate Drive so TJ ; 2SoC ~2.~V V) I 40 30 10 l/ 1;!V I.11/ I'J1.B (rnA) III.20 r/10 V L.o-- ~V 11.6 ~ .1 1 .4 ~ 1.2 V 1.0 V_ I-- 0.6 V f-- o o 0.4 O.B 1.2 1.6 2.0 Vos (V) SOO 400 10 (...