VNDS06

VNDS06 ICrSiliconix ~ incorporated N·Channel Enhancement·Mode MOSFET DESIGNED FOR: Switching Amplification FEATURES n Low rDS(on} < 10 Low Cost Surface Mount Package SOT-23 GEOMETRY DIAGRAM TYPE Single Quad IPACKAGE DEVICE TO-206AC VN10LE TO-92 2N7000, 2N7008 VN0603L, VN0610LL VN2222LL TO-237 SOT-23 VN2222LM VN0603T, VN0605T 2N7002 14-Pin Plastic VQ1000J 14-Pin Dual-In- Line VQ1000P Chip Available as above specifications Gate Pad 0.0041 (0.104) 0.0049 (0.124) Source Pad 0.0041 (0.104) 0.0049 (0.124) T 0.027 (0.686) 1 7-148 ~Siliconix ~ incorporated TYPICAL CHARACTERISTICS Output Characteristics 1.0 II- VG = 10 V I0.8 /'" II.,. O.S V- 'I10 (A) 0.4 7V I s~ _ I 5V J 0.2 / 4V .- - 3~ - 0 04 8 12 Vos (V) 1S 20 VNDS06 Ohmic Region Characteristics 1.0 VGS =10Vj 7V VaJ..-0.8 / V ...... // V J slv O.s TJ 25°C '/. / h V. / I 10 (A) 0.4 J l~jV..... 5V I 0.2 fb ~ yo o 'o 41V 31V 2 3 45 VOS (V) Output ...