N-Channel Enhancement-Mode MOSFET
VNDS06
ICrSiliconix
~ incorporated
N·Channel Enhancement·Mode MOSFET
DESIGNED FOR:
• Switching • Amplification
FEATUR...
Description
VNDS06
ICrSiliconix
~ incorporated
N·Channel Enhancement·Mode MOSFET
DESIGNED FOR:
Switching Amplification
FEATURES n Low rDS(on} < 10
Low Cost Surface Mount Package SOT-23
GEOMETRY DIAGRAM
TYPE Single
Quad
IPACKAGE
DEVICE
TO-206AC VN10LE
TO-92
2N7000, 2N7008 VN0603L, VN0610LL VN2222LL
TO-237 SOT-23
VN2222LM
VN0603T, VN0605T 2N7002
14-Pin Plastic
VQ1000J
14-Pin Dual-In-
Line
VQ1000P
Chip
Available as above specifications
Gate Pad 0.0041 (0.104) 0.0049 (0.124)
Source Pad 0.0041 (0.104) 0.0049 (0.124)
T 0.027 (0.686)
1
7-148
~Siliconix ~ incorporated TYPICAL CHARACTERISTICS
Output Characteristics
1.0
II- VG = 10 V
I0.8 /'" II.,.
O.S V-
'I10
(A) 0.4
7V
I
s~ _
I
5V
J
0.2
/
4V
.- - 3~ -
0 04
8 12 Vos (V)
1S 20
VNDS06
Ohmic Region Characteristics
1.0 VGS =10Vj
7V
VaJ..-0.8
/ V ......
// V
J
slv
O.s TJ
25°C '/. /
h V. /
I
10 (A) 0.4
J l~jV.....
5V
I
0.2
fb
~ yo
o 'o
41V 31V 2 3 45
VOS (V)
Output ...
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