VNMA06

VNMA06 tcrSiliconix ~ incorporated N·Channel Enhancement·Mode MOSFET DESIGNED FOR: Switching FEATURES High Speed for Military Applications (see VNDQ06 for Industrial Applications) I ITYPE PACKAGE DEVICE Single TO-205AD. JANTX2N6660 GEOMETRY DIAGRAM 0.012 (0.304) 0.010 (0.254) T 0.077 (1.956) Source Pad -I+--+---HIII+ Gate Pad ---1f+--l---HIII- 0.0094 (0.24) 0.0095 (0.241) 9 mil 7-158 ~Siliconix ~ incorporated TYPICAL CHARACTERISTICS Output Characteristics I2.0 Vas = 10 V 9V 1.6 '/ 8V 1.2 10 (A) 0.8 r;'" r;'" 7V 6V 5V rr 0.4 4V 3V 0 a 10 20 30 40 Vos (V) 50 VNMA06 Ohmic Region Characteristics 2. 0 r--...,.....-r-~"T"--r-"T"""...,.......,r-...,.....-, 1.6 1--t--t-+---1--/-+--f-~","," 1 .2 1--t--t-+---1--/n..r:~~110 (A) 0.4 23 Vos (V) 45 Output Characteristics for Low Gate Drive 100 Vas = 3 V '/ 2.8 V III / ""'I I80 ./ TJ = 25°C // t6t 60 10 '/ -r U/' Lt , -,(rnA) 40 1/1 j ',1./. 20 2.2 V tot o~ 1.8 V o 0.4 0.8 1.2 1.6 2 Vos (...