VNMA09

crSiliconix ~ incorporated VNMA09 N-Channel Enhancement-Mode MOSFET DESIGNED FOR: Switching FEATURES High Speed for Military Applications (see VNDQ09 for Industrial Applications) TYPE Single PACKAGE DEVICE TO-205AD JANTX2N6661 GEOMETRY DIAGRAM 0.012 (0.304) 0.010 (0.254) T 0.077 (1.956) Source Pad -+t--+--+ Gate Pad -H--I---\- 0.0094 (0.24) 0.0095 (0.241) 9mil-ll- 1'------ 0.041 (1.041) --.J-I III 7-163 VNMA09 TYPICAL CHARACTERISTICS Output Characteristics 2 !VGS = 10V rr1.S g'V 81V - 1.2 r 10 (A) 0.8 71V I sv 5V- 4V 0.4 3V o 2V o 20 40 SO 80 100 Vos (V) a'r'Siliconix ~ incorporated Ohmic Region Characteristics VG = 10 V 7V/ ~I 0.8 1/ / SV_l- I/ V 1 VLV.....' jO.S TJ = 25°C '/ ~ ~ !-- 5V .~ I=- ~ 10 (A) 0.4 VA I.1:7/ ./"""" 4t - r- ~0.2 ~ V- ~ t-3~-= r- 2 r- o o 2 3 45 Vos (V) Output Characteristics for Low Gate Drive A100 VCS = 3 V "IL 2.8 80 / ' i""" 10 (rnA) so 40 I/L rt 1--1'"' II'" '"MI ,,-r- 20 I' 11/ I. o o 0...