VPDQ20

VPDQ20 P-Channel Enhancement-Mode MOSFET .:rSilicanix ~ incorporated DESIGNED FOR: @ Switching Amplification FEATURES High Breakdown> 200 V Low rDSlon) < 20 n TYPE Single IPACKAGE DEVIC--E TO-206AC VP2020E TO-92 VP2020L BSS92 Chip Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.010 (0.254) 0.0087 (0.2209) Source Pad 0.0070 (0.1778) ....lh1Q. (0.254) 7-168 T 0.038 (0.965) 1 ~Siliconix ~ incorporated TYPICAL CHARACTERISTICS Output Characteristics -1.0 V s=-10Y ~/-0.8 ",-- -0.6 10 t(A) -0.4 ,Y-0.2 i;""" -8 V -7 V 6V -S V -4 V if o o -10 -20 -30 VOS (V) -3 V -40 -so VPDQ20 Ohmic Region Characteristics -sao I I I I- TJ = 25°C -400 J iLGS Lldv yI;-6 I -300 10 (mA) -200 -SV ", ./~ I----" ~ ~ ~4.SV /~ :::;;.:: ...-~ -4 V ~ :,...0 ~-100 rI--:; _31V o~ o -1 -2 -3 -4 -5 VOS (V) Output Characteristics for Low Gate Drive -100 -80 III TJ = 2SoC VG =-4VY V -3.6V V /' 10 (mA) -60 -40 -20 VV V/ ~V ~ ~ ~ VI..---"...-...