VPDS06

.L~SIIiilnicocrpDonraitexd VPDS06 P-Channel Enhancement-Mode MOSFET "FETlington" DESIGNED FOR: Switching (P-Channel Complement to 2N7000) FEATURES Low rDS(on) < 10 n Available in Surface Mount TYPE Single PACKAGE DEVICE TO-206AC VP0610E, TP0610E TO-92 VP0610L, TP0610L SOT-23 VP0610T, TP0610T 14-Pin Plastic VQ2000J 14-Pin Dual-In- line o VQ2000P Chip Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.0041 (0.104) 0.0049 (0.124) Source Pad 0.0041 (0.104) 0.0049 (0.124) T0.027 1 (0.686) 7-173 VPDS06 TYPICAL CHARACTERISTICS Output Characteristics :: I/if"VI I J I -300 10 (rnA) -200 -100 v V' ~ o o -10 -J -J -3 ~ -20 -30 Vos (V) -40 -50 ~.r'Siinlciocrpoornatiexd I 111m-500 -400 Ohmic Region Characteristics -300 10 (mA) -200 -100 / ~~ -~1..~..... b--'"I-"""" ~ l,...---' iV I~ i""" o~ o -1 -2 -3 ......,-.6.. V;.,.11 -5 V 14)'3V'- -4 -5 Ves (V) 10 (rnA) Output Characteristics for Low Gate Drive -0.4 -0.8 -1.2...