P-Channel Enhancement-Mode MOSFET
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VPDS06
P-Channel Enhancement-Mode MOSFET "FETlington"
DESIGNED FOR:
• Switching (P-Channel...
Description
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VPDS06
P-Channel Enhancement-Mode MOSFET "FETlington"
DESIGNED FOR:
Switching (P-Channel Complement to 2N7000)
FEATURES Low rDS(on) < 10 n
Available in Surface Mount
TYPE Single
PACKAGE
DEVICE
TO-206AC VP0610E, TP0610E
TO-92 VP0610L, TP0610L
SOT-23 VP0610T, TP0610T
14-Pin Plastic
VQ2000J
14-Pin Dual-In-
line
o VQ2000P
Chip
Available as above specifications
GEOMETRY DIAGRAM
Gate Pad 0.0041 (0.104) 0.0049 (0.124)
Source Pad
0.0041 (0.104) 0.0049 (0.124)
T0.027
1 (0.686)
7-173
VPDS06
TYPICAL CHARACTERISTICS
Output Characteristics
:: I/if"VI I J I
-300 10 (rnA)
-200
-100
v
V'
~
o o -10
-J -J
-3 ~
-20 -30 Vos (V)
-40
-50
~.r'Siinlciocrpoornatiexd
I 111m-500
-400
Ohmic Region Characteristics
-300 10 (mA) -200
-100
/ ~~
-~1..~..... b--'"I-""""
~ l,...---'
iV
I~ i"""
o~ o -1 -2 -3
......,-.6.. V;.,.11
-5 V
14)'3V'-
-4 -5
Ves (V)
10 (rnA)
Output Characteristics for Low Gate Drive
-0.4
-0.8 -1.2...
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