VPDV10

VPDV10 . HSiliconix incorporatec P-Channel Enhancement-Mode MOSFET DESIGNED FOR: C .. ,i ....... hir"'ln ..... ,' '~\J' '" 'bI Amplification FEATURES Low rDS(on) < 5 n TYPE Single Quad IPACKAGE DEVICE TO-205AD VP08088, VP10088 TO-92 VP0808L, VP1008L TO-237 VP0808M, VP1008M 14-Pin Plastic VQ2004J, VQ2006J 14-Pin Dual-In- Line VQ2004P, VQ2006P Chip Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.005 (0.127) 0.007 (0.178) Source Pad 0.006 (0.152) 0.007 (0.178) 0.058 (1.47) ~1 I~ 0.053 (1.35) 7-178 ~SilicDnix ~ im::orporated TYPICAL CHARACTERISTICS Output Characteristics -2.5 -2.0 -1.5 10 (A) -1.0 / VG = -12 V I~ t ." ~ V -0.5 II -10 V -9 V -8 V -7 V -6 V -5 V o o -10 -20 -30 -40 -50 Vos (V) VPDV10 Ohmic Region Characteristics -2.0 I II -TJ =25°C -1.6 1.v1.GS I = -10 V -9 1 V >1<1"I_.._.... ~-1.2 /' ~ "/ 10 (A) -0.8 ~ /'"i""" ~ ~ -'~ ~ V-0.4 ~ V -7 V \J- -5 V -4 V o o -1 -2 -3 -4 -5 Vos (V) Out...