P-Channel Enhancement-Mode MOSFET
VPDV10
. HSiliconix incorporatec
P-Channel Enhancement-Mode MOSFET
DESIGNED FOR:
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..... ,' '~\...
Description
VPDV10
. HSiliconix incorporatec
P-Channel Enhancement-Mode MOSFET
DESIGNED FOR:
C .. ,i ....... hir"'ln
..... ,' '~\J' '" 'bI
Amplification
FEATURES
Low rDS(on) < 5 n
TYPE Single
Quad
IPACKAGE
DEVICE
TO-205AD VP08088, VP10088
TO-92 VP0808L, VP1008L
TO-237 VP0808M, VP1008M
14-Pin Plastic
VQ2004J, VQ2006J
14-Pin Dual-In-
Line
VQ2004P, VQ2006P
Chip
Available as above specifications
GEOMETRY DIAGRAM
Gate Pad
0.005 (0.127) 0.007 (0.178)
Source Pad
0.006 (0.152) 0.007 (0.178)
0.058 (1.47)
~1
I~
0.053 (1.35)
7-178
~SilicDnix ~ im::orporated TYPICAL CHARACTERISTICS
Output Characteristics
-2.5
-2.0
-1.5 10 (A) -1.0
/ VG = -12 V
I~
t ."
~
V
-0.5
II
-10 V -9 V -8 V
-7 V -6 V -5 V
o o -10 -20 -30 -40 -50
Vos (V)
VPDV10
Ohmic Region Characteristics
-2.0 I II -TJ =25°C
-1.6
1.v1.GS
I
=
-10
V
-9
1 V
>1<1"I_.._....
~-1.2
/'
~ "/
10 (A) -0.8
~ /'"i""" ~ ~ -'~
~ V-0.4
~
V
-7 V
\J-
-5 V -4 V
o
o -1 -2 -3 -4 -5
Vos (V)
Out...
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