VPDV24

g Siliconix incorporated VPDV24 P-Channel Enhancement-Mode MOSFET DESIGNED FOR: Switching Amplification FEATURES High Breakdown > 240 V LowrOS(on)<10n TYPE Single PACKAGE DEVICE TO-205AD VP2410B TO-92 VP2410L BS208 Chip Available as above specifications GEOMETRY DIAGRAM Gate Pad ............... 10.005 (0.127) 0.007 (0.178) Source Pad 0.006 (0.152) ...."........'............1............1............1.......................11...................................................................................................................................................l1.l...i......... 0.058 (1.47) ~1.~~~0.~05~3~~~.I0.007 (0.178) " 1 ' .11 111 (1.35) .. 7-183 VPDV24 TYPICAL CHARACTERISTICS -1.0 -0.8 -0.6 10 (A) -0.4 Output Characteristics ~VIGS=-10V...