P-Channel Enhancement-Mode MOSFET
VPMH03
~Siliconix ~ incorporated
P-Channel Enhancement-Mode MOSFET
DESIGNED FOR:
e SV/itching • Amplification
FEATURE...
Description
VPMH03
~Siliconix ~ incorporated
P-Channel Enhancement-Mode MOSFET
DESIGNED FOR:
e SV/itching Amplification
FEATURES
High Speed
Low rOS(on) < 2.5 n
TYPE Single
Quad
IPACKAGE
DEVICE
TO-205AD VP0300B
TO-92 VP0300L
TO-237 VP0300M
14-Pin Plastic
VQ2001J
14-Pin Dual-In-
Line
VQ2001P
Chip
Available as above specifications
GEOMETRY DIAGRAM
7-188
0.008 (0.203)
0.0085 (0.216)
Gate Pad
tcrSiliconix
~ incorporated TYPICAL CHARACTERISTICS
Output Characteristics
-2.0
-1.6
-1.2 10 (A) -0.8
/vGS = -12 V
J
/~ ...~
Y
TJ = 25°C -10 V -9 V-8 V -7 V
-0.4 -6 V
-5 V 0
0 -4 -8 -12 -16 -20
Vos (V)
VPMH03
Ohmic Region Characteristics
-1.0 VGS = -12 V
/
-1 OJ.. ...... -9 v i
II // V / '-0.8
TJ = 25°C
I
-8 V
-0.6
10 (AI -0.4
'IJ
h 1/ /1/.
~ ",
,;AV
-0.2 I-"'"
"..
I
)V
_6 1v slv
o t-- I o -1 -2 -3 -4 -5
VOS (V)
Output Characteristics for Low Gate Drive
-50 VGS - -6.0 V T~ = ~socli- -5.5 V
r+-40
II- -5.0 V
'l-30
10 (mA)
-20 ~~
V
-10 IL
...
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