VPMH03

VPMH03 ~Siliconix ~ incorporated P-Channel Enhancement-Mode MOSFET DESIGNED FOR: e SV/itching Amplification FEATURES High Speed Low rOS(on) < 2.5 n TYPE Single Quad IPACKAGE DEVICE TO-205AD VP0300B TO-92 VP0300L TO-237 VP0300M 14-Pin Plastic VQ2001J 14-Pin Dual-In- Line VQ2001P Chip Available as above specifications GEOMETRY DIAGRAM 7-188 0.008 (0.203) 0.0085 (0.216) Gate Pad tcrSiliconix ~ incorporated TYPICAL CHARACTERISTICS Output Characteristics -2.0 -1.6 -1.2 10 (A) -0.8 /vGS = -12 V J /~ ...~ Y TJ = 25°C -10 V -9 V-8 V -7 V -0.4 -6 V -5 V 0 0 -4 -8 -12 -16 -20 Vos (V) VPMH03 Ohmic Region Characteristics -1.0 VGS = -12 V / -1 OJ.. ...... -9 v i II // V / '-0.8 TJ = 25°C I -8 V -0.6 10 (AI -0.4 'IJ h 1/ /1/. ~ ", ,;AV -0.2 I-"'" ".. I )V _6 1v slv o t-- I o -1 -2 -3 -4 -5 VOS (V) Output Characteristics for Low Gate Drive -50 VGS - -6.0 V T~ = ~socli- -5.5 V r+-40 II- -5.0 V 'l-30 10 (mA) -20 ~~ V -10 IL ...