Document
Alfa-MOS
Technology
AFN1298S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN1298S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-263-2L )
Features
100V/30A,RDS(ON)= 12mΩ@VGS=10V 100V/15A,RDS(ON)= 18mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-263-2L package design
Application
DC/DC Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV ndustrial
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
1298S
AFN1298ST263RG
AAAAAA
TO-263-2L
BBBBBB
ϡʳ A Lot code ϡʳ B Date code
ϡʳ AFN1298ST263RG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Jan. 2014
Description Gate Source Drain
Unit Tape & R.