AFN1990S

Alfa-MOS Technology AFN1990S 60V N-Channel Enhancement Mode MOSFET General Description AFN1990S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 60V/40A,RDS(ON)= 7.8mΩ@VGS=10V 60V/25A,RDS(ON)= 9.8mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Pin Description ( TO-263-2L ) Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package 1990S AFN1990ST263RG AAAAAA TO-263-2L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN1990ST263RG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Jan. 2014 Description Gate Source Drain Unit Tape & Reel Quantity 800 EA www.alfa-mos.com Page 1 Alfa-MOS T...